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Basic processes inside the growth chambers of a) MOCVD, b) MBE, and c) CBE. W.T. Tsang, “From Chemical Vapor Epitaxy to Chemical Beam Epitaxy”. J. Cryst. Growth. 95, 121 (1989). |
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05 December 2007 |
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editBasic processes inside the growth chambers of a) MOCVD, b) MBE, and c) CBE. W.T. Tsang, “From Chemical Vapor Epitaxy to Chemical Beam Epitaxy”. J. Cryst. Growth. 95, 121 (1989).
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current | 04:06, 5 December 2007 | ![]() | 1,267 × 867 (173 KB) | Sgptch (talk | contribs) | Basic processes inside the growth chambers of a) MOCVD, b) MBE, and c) CBE. W.T. Tsang, “From Chemical Vapor Epitaxy to Chemical Beam Epitaxy”. J. Cryst. Growth. 95, 121 (1989). |
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