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| Description |
English: A diagram showing anisotropic wet etching in silicon, showing the undercut under the resist. The etch rate in the <111> direction is much slower (about 100× slower) than in the <100> direction. |
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| Date | |||
| Source | Own work | ||
| Author | Inductiveload | ||
| Permission (Reusing this file) |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 21:27, 14 May 2010 | | 300 × 175 (18 KB) | Inductiveload | {{Information |Description={{en|A diagram showing anisotropic wet etching in silicon, showing the undercut under the resist. The etch rate in the <111> direction is much slower (about 100× slower) than in the <100> direction.}} |Source={{own}} |Date=2010 |
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